Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers

Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers

Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along ...

Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by c...

Hole levels in InAs self-assembled quantum dots

Fröhlich interaction in InAs/GaAs self-assembled quantum dots

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Size quantization effects in InAs self-assembled quantum dots

We study size quantization effects in InAs self-assembled quantum dots ~QDs! that are embedded in GaAs. Using capacitance, photoluminescence and photovoltage spectroscopy, we correlate the measured quantized level energies with the quantum dot sizes and densities obtained from transmission electron microscopy. With increasing dot size, we observe a strong redshift of the QD features in all our ...